- Epitaxial development of novel processes and structures for GaN material system in MOCVD (Metal-organic Chemical Vapor Deposition) processes - Planning and evaluation of experiments and measurements - In-depth analysis of processes for crucial parameters on material components and properties - Sustainable and systematic development in improving efficiency , stability and electrical characteristics of epitaxial wafers

- University degree in chemistry, physics, materials science or a comparable natural science degree - Several years of experience in research and development of novel structures and new process regimes of III-V semiconductors, preferably doctorate in the field of epitaxy and deep understanding of MOCVD processes - Theoretical knowledge of optoelectronic semiconductor - Analytical strengths & ability to solve technical problems and issues - Extraordinary ability for innovation of semiconductor device