• Successfully transferred newly developed recipes and process conditions from the German headquarters to the new factory.(8inch Micro LED pocess) Process stabilization progress and improvement through DOE and statistical analysis • Participating in development tasks for 8in Micro LED Epitaxy structure • Collaboratively execute development tasks and optimize process conditions. (Sapphire base & GaN On Si base micro LED Epi Structure) • Establishment of process conditions for micron LED • Troubleshoot MOCVD and growth process as necessary to ensure process performance and stability. • Validate a new MOCVD system and transfer 8in Micro LED process to manufacturing. • Basic theoretical education and MOCVD training for new employees

• Managed quality during the development stage for new products 1) Aligned customers and internal teams for mass production, managing output at each development stage. 2) Led improvements in development quality for stable mass production and conducted verification at each development stage • Managed incoming quality by improving supplier quality. 1) Collaborated with customers to launch new products, enhancing partner quality to meet internal customer specifications. 2) Aligned measuring equipment between partners, LG and customer , and ensured quality control of partner products.

• Develop and improve epitaxial structures and MOCVD processes for 6” sapphire substrate. • Designed epi structures and process for BLU and lighting. 1) Developed wide V-pit base high-performance LED structures with Aixtron and Veeco reactors. 2) Structure transfer each reactor Aixtron reactor to Veeco reactor • Epi growth process development/optimization process window with DOE. Main topic: MQW quality improve, Mg profile control in p-Region with Wide-Vpit structure. • Device and grown wafer characteristics analysis with various measurement equipment. • Improved major MOCVD reactor parts for process stabilization. (Wafer carrier and BM) • Transferred MOCVD technology to overseas companies for technical OEM. • Troubleshot MOCVD and growth processes to ensure process performance and stability • Validated new MOCVD system and transferred process condition to manufacturing.

• Led initiatives to propose, manage, and complete projects aimed at enhancing performance, increasing yield, and reducing costs. • Device and grown wafer characteristics analysis with various measurement equipment. • Improvement of major parts of MOCVD reactor for process stabilization. (Particle filter, Wafer carrier) • Developed procedures for cleaning showerheads, identified critical process parameters, and established production controls following major maintenance activities. (Aixtron CCS reactor) • Collaborated with tool vendors to enhance the performance of MOCVD tools. • Validated new MOCVD system and transferred process condition to manufacturing. • Provided comprehensive training to personnel on the safe and effective use of new MOCVD technologies.

• Developed low-hardness Cu-bonding wires for fine pitch packaging processes. • Led initiatives to propose, manage, and complete projects aimed at enhancing performance, increasing yield, and reducing costs. • Validate new Production Equipment and transferred process condition to manufacturing. • Trained personnel in the safe and effective use of new production equipment. • Analyzed bonding wire characteristics using various measurement equipment.

• Developed and improved epitaxial structures and MOCVD processes specifically for 470nm keypads used in cell phones. • Device and grown wafer characteristics analysis with various measurement equipment • Developed procedures for cleaning showerheads, identified critical process parameters, and established production controls following major maintenance activities. (Aixtron CCS reactor) PATENTS (USA) 1. Oh Min Kwon, Jong Pil Jeong - Light emitting device, light emitting device package and illumination system, US8796705B2 2. Oh Min Kwon, Jong Pil Jeong - Light emitting device, light emitting device package and illumination system, US10283673B2 3. Oh Min Kwon, Jong Hak Won, Heon Jin Seo- Light emitting device, US2014054544A1 4. Jung Hyun Hwang, Oh Min Kwon, Jong Hak Won- Light emitting device, light emitting device package, US9349914B2 5. Oh Min Kwon, Jong Hak Won,Kwang Sun Baek,Heon Jin Seo- Light emitting device, light emitting device package , US9082929B2. 6. 4.Jong Ho Na, Oh Min Kwon, June O Song, Jeong Tak Oh- Semiconductor device and light emitting device package comprising same, US10971649B2

Development of integrated recipe based on high productivity - With Veeco reactor

Development of High-Efficiency Epitaxial Structures for Aixtron CCS reactor without EBL

Development of Wide V-pit base Integrated Recipe (Lighting / BLU / Vertical) - WIth Veeco reactor

Wide V-pit base Epitaxial Structure transfer Aixtron reactor to Veeco reactor - Structure transfer Axitron reactor to Veeco reactor

Development of 190lm/W-Class Epitaxial Structures for Lighting with Aixtron Reactor

Development of High-Efficiency Epitaxial Structures for Aixtron reactor

Development of 180lm/W-Class Epitaxial Structures for Lighting with Veeco Reactor

Development of Productivity-Enhanced Structures (5X6" to 6X6") - wafer capa increase

Development of 168lm/W-Class Epitaxial Structures for Lighting with veeco reactor

Electronic Engineering & semiconductor

- Technical Area: III-Nitride compound semiconductors / MOCVD - Thesis: Heteroepitaxial Growth and characterization of GaN on Sapphire substrate